# Indium phosphide, InP

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus, belonging to the III-V group of semiconductors. It offers a high electron mobility and a direct bandgap, making it especially useful for optoelectronic devices that operate in the infrared and visible spectra. InP is widely used as a substrate material for epitaxial growth of other III-V semiconductors, such as GaAs and InGaAs, and is essential for constructing high-speed transistors and photonic integrated circuits. The material is often grown using molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD). InP is particularly important in the fabrication of high-performance light-emitting diodes (LEDs), laser diodes, and waveguide-based photonic components. It's also a key material for fiber-optic communication systems. Handling InP requires caution due to the toxicity of its constituent elements.

## Other name

- Indium(III) phosphide

## External links

- Indium(III) phosphide - Wikipedia
- Indium phosphide - NSM Archive